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FTD2012 |
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| Part Number | FTD2012 |
| Manufacturer | Sanyo Semicon Device |
| Description | FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings /... |
| Features |
• Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance ... |
| Document |
 FTD2012 Data Sheet
PDF 10.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FTD2011 |
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Load Switching Applications |
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| 2 | FTD2011A |
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N CHANNEL MOS SILICON TRANSISTOR |
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| 3 | FTD2013 |
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Load Switching Applications |
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| 4 | FTD2014 |
Sanyo Semicon Device |
Load Switching Applications |
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| 5 | FTD2015 |
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Load Switching Applications |
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| 6 | FTD2017 |
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Load Switching Applications |
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