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FTD2017 |
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| Part Number | FTD2017 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density ... |
| Features |
· Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2017] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Conditions ... |
| Document |
 FTD2017 Data Sheet
PDF 42.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FTD2011 |
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| 2 | FTD2011A |
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| 3 | FTD2012 |
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| 4 | FTD2013 |
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| 5 | FTD2014 |
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| 6 | FTD2015 |
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