Samsung Electronics K4S Hoja de datos

No.	parte #	Fabricante	Descripción
1	K4S641632H	Samsung Electronics	64Mb H-die SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
2	K4S280832B	Samsung Electronics	128M-bit SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
3	K4S561632H	Samsung Electronics	256Mb H-Die SDRAM • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All
4	K4S1G0732D	Samsung Electronics	SDRAM stacked 1Gb D-die ....................................................................................................................................... 4 2.0 General Description.........................................................................................
5	K4S1G0632D	Samsung Electronics	SDRAM stacked 1Gb D-die ....................................................................................................................................... 4 2.0 General Description.........................................................................................