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K4S561632H |
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| Part Number | K4S561632H |
| Manufacturer | Samsung Electronics |
| Description | The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by ... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (8K Cycle) • Pb/Pb-free Package • RoHS compliant for Pb-free Package GENERAL DESCRIPTION The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchr... |
| Document |
 K4S561632H Data Sheet
PDF 424.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S561632A |
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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
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| 2 | K4S561632B |
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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
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| 3 | K4S561632C |
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256Mbit SDRAM |
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| 4 | K4S561632D |
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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
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| 5 | K4S561632E-NC60 |
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SDRAM 256Mb E-die |
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| 6 | K4S561632E-NC75 |
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SDRAM 256Mb E-die |
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Desde 2024. D4U Semiconductor.
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