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K4S280832B |
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| Part Number | K4S280832B |
| Manufacturer | Samsung Electronics |
| Description | The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design all... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAM... |
| Document |
 K4S280832B Data Sheet
PDF 107.62KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S280832A |
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128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 2 | K4S280832C |
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128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 3 | K4S280832E-TC75 |
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128Mb E-die SDRAM Specification |
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| 4 | K4S280832E-TL75 |
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128Mb E-die SDRAM Specification |
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| 5 | K4S280832F-TC75 |
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128Mb F-die SDRAM Specification |
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| 6 | K4S280832F-TL75 |
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128Mb F-die SDRAM Specification |
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Desde 2024. D4U Semiconductor.
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