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K4S641632H |
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| Part Number | K4S641632H |
| Manufacturer | Samsung Electronics |
| Description | Revision 1.5 (February, 2004) - Corrected typo. Revision 1.6 (March, 2004) - Modified Pin Description. Revision 1.7 (May, 2004) - Added Note 5. sentense of tRDL parameter. CMOS SDRAM Revision 1.8 (... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 ... |
| Document |
 K4S641632H Data Sheet
PDF 145.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S641632C |
Samsung semiconductor |
1M x 16Bit x 4 Banks Synchronous DRAM |
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| 2 | K4S641632D |
Samsung semiconductor |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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| 3 | K4S641632E |
Samsung semiconductor |
64Mbit SDRAM |
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| 4 | K4S641632F |
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64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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| 5 | K4S641632H-L60 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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| 6 | K4S641632H-L70 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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Desde 2024. D4U Semiconductor.
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