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STMicroelectronics |
Military 32K x 8 CMOS EPROM • High Performance CMOS — 120 ns Access Time • Ceramic Leadless Chip Carrier (CLLCC) • EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE 25°C Test Conditions f = 1MHz VR = 0V VR = 5V * Pulse test: tp ≤ 300µs δ < 2%. Min. Typ. 120 35 Max. Unit pF August 1999 Ed 1A 1/4 TMBAT 49 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward curr |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 Unit mA 10 Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority c |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE in. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.7 1 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority carrier conductio |
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STMicroelectronics |
Military 32K x 8 CMOS EPROM • High Performance CMOS — 120 ns Access Time • Ceramic Leadless Chip Carrier (CLLCC) • EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil |
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Desde 2024. D4U Semiconductor.
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