TMBYV10-60 |
Part Number | TMBYV10-60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high freque... |
Features |
in.
Typ.
Max. 0.5 10
Unit mA
Tj = 25°C
0.7 1
V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Tj = 25°C Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF
Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode.
This current depends only of diode capacitance and external circuit impedance. Satisfac... |
Document |
TMBYV10-60 Data Sheet
PDF 76.88KB |
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