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TMBYV10-40 |
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| Part Number | TMBYV10-40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequ... |
| Features |
< 2%.
Test Conditions VR = VRRM
Min.
Typ.
Max. 0.5
Unit mA
10 Tj = 25°C 0.55 0.85 V
DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF
Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode. Fig. 1 : Forward current versus forward voltage at low level (typical va... |
| Document |
 TMBYV10-40 Data Sheet
PDF 82.56KB |
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