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TMBAT49 |
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| Part Number | TMBAT49 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE... |
| Features |
25°C Test Conditions f = 1MHz VR = 0V VR = 5V
* Pulse test: tp ≤ 300µs δ < 2%.
Min.
Typ. 120 35
Max.
Unit pF
August 1999 Ed 1A
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TMBAT 49
Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values).
Figure 3. Reverse current versus junction temperature.
Figure 4. Reverse current versus VRRM in per cent.
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TMBAT 49
Figure 5. Capacitance C versus reverse applied voltage VR (typical values). Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms.
Figu... |
| Document |
 TMBAT49 Data Sheet
PDF 70.61KB |
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Desde 2024. D4U Semiconductor.
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