| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
STH8N80FI |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to switching motor control application |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to switching motor control application |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They |
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STMicroelectronics |
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They |
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STMicroelectronics |
STH7NA80FI nsulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2 -65 to 150 150 C C ( •) Pulse width limited by safe ope |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area October 1998 Va l u e ST W9NA60 STH9NA60F I 600 600 ± 30 6.4 9.5 46 38 38 70 160 0.56 1.28 4000 -65 to 150 150 Un it V V V A |
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STMicroelectronics |
STH13NB60FI Low Voltage Operation (2.7 V to 12 V) Calibrated Directly in ؇C 10 mV/ ؇C Scale Factor ؎ 2؇C Accuracy Over Temperature (typ) ؎ 0.5؇C Linearity (typ) Stable with Large Capacitive Loads Specified –40؇C to +125؇C, Operation to +150؇C Less than 60 mA Qui |
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STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET TAB 1 H2PAK-6 7 Order code STH300NH02L-6 VDSS 24 V RDS(on) max. ID (1) < 1.2 mΩ 180 A 1. Current limited by package. • Designed for automotive applications and AEC-Q101 qualified • Conduction losses reduced • Low profile, very low parasitic in |
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STMicroelectronics |
STH12NA60 te-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temper |
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STMicroelectronics |
N-channel MOSFET Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.0025 Ω • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A |
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STMicroelectronics |
N-channel Power MOSFET STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet — production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package. ■ |
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STMicroelectronics |
Antenna tuning circuit Dedicated controller to bias BST tunable capacitors Operation compliant with cellular systems requirements Turbo and glide modes for optimal system performance Integrated boost converter with 3 programmable outputs (from 0 to 24 V) Low powe |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 STP12N120K5 1200 V STW12N120K5 0.69 Ω 12 A 250 W STWA12N120K5 TO-247 3 2 1 3 2 1 TO-247 long leads Figure 1: Internal schematic diagram D(TAB) D(2, TAB) G(1) G(1) S(2, 3) (H 2PAK-2) |
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STMicroelectronics |
N-channel Power MOSFET TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A • Designed for automotive applications and AEC-Q101 qualified • Very low on-r |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code STH52N10LF3-2AG VDS 100 V RDS(on) max. 20 mΩ ID 52 A Designed for automotive applications and AEC-Q101 qualified Conduction losses reduced Low profile, very low parasitic inductance, high current package Applications Switching |
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STMicroelectronics |
N-channel Power MOSFET Order code STHU36N60DM6AG VDS 600 V RDS(on) max. 99 mΩ ID 29 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely |
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STMicroelectronics |
N-channel Power MOSFET Order code STHU47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code STH30N65DM6-7AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extreme |
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Desde 2024. D4U Semiconductor.
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