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STH270N8F7-6 |
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| Part Number | STH270N8F7-6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char... |
| Features |
Order codes
VDS
RDS(on) max.
STH270N8F7-2 STH270N8F7-6
80 V
0.0021 Ω
STP270N8F7
0.0025 Ω
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A G(1) G(1) S(2, 3, 4, 5, 6, 7) H2PAK-2, H2PAK-6 S(3) TO-220 H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3 Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance... |
| Document |
 STH270N8F7-6 Data Sheet
PDF 501.99KB |
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Desde 2024. D4U Semiconductor.
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