STH30N65DM6-7AG |
Part Number | STH30N65DM6-7AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery t... |
Features |
Order code STH30N65DM6-7AG
VDS 650 V
RDS(on) max. 115 mΩ
ID 28 A
• AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery c... |
Document |
STH30N65DM6-7AG Data Sheet
PDF 809.33KB |
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