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STHI10N50 |
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| Part Number | STHI10N50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | STHI10N50 STHI10N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA TYPE STHI10N50 STHI10N50FI Voss 500 V 500 V 10 10 A 10 A • HIGH INPUT IMPEDANCE • LO... |
| Features |
perature Max. operating junction temperature
(e) Pulse width limited by safe operating area
June 1988
500
V
±20
V
10
A
30
A
STHI10N50
STHI10N50FI
100
35
W
0.8
-65 to 150
150
1/6
633
STHI10N50 - STHI10N50FI
THERMAL DATARthj _case Thermal resistance junction-case
TO-220 ISOWATT220
max 1_25 3.57
°C/w
ELECTRICAL CHARACTERISTICS (Ti = 25°C unless otherwise specified)
Parameters
Test Conditions
OFF
,,(SR) oss Drain-source breakdown voltage
10= 250 p,A
VGs= 0
500
loss
Zero gate voltage
VOS = Max Rating
drain current (VGs=O) Vos = Max Rating x 0.8 Ti= 125°C
IGSS
Gate... |
| Document |
 STHI10N50 Data Sheet
PDF 202.88KB |
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Desde 2024. D4U Semiconductor.
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