STMicroelectronics GB3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	STGB30H60DFB	STMicroelectronics	IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffi
2	STGB30NC60K	STMicroelectronics	short circuit rugged IGBT ■ ■ ■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs 3 1 1 3 2 Applications ■ ■ High frequency inverters Motor drivers D²PAK TO-220 Description This IGBT utilizes the
3	STGB30NC60W	STMicroelectronics	ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220
4	STGB30V60F	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power sup
5	STGB30V60DF	STMicroelectronics	Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo
6	GB30NC60K	STMicroelectronics	IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ) ■ Short circuit withstand time 10 µs ct(sApplications du ■ High frequency inverters ro ■ Motor drivers te PDescription oleThis IGBT utilizes the advanced P
7	STGB30M65DF2	STMicroelectronics	Trench gate field-stop IGBT  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 30 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Descr
8	STGB35N35LZ	STMicroelectronics	IGBT • Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Applicati
9	STGB3HF60HD	STMicroelectronics	IGBT
10	GB3NB60KD	STMicroelectronics	N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN
11	GB30NC60W	STMicroelectronics	IGBT ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) t(s)Applications uc ■ High frequency motor controls, inverters, ups d ■ HF, SMPS and PFC in both hard switch and roresonant topologies te PDescription oleThis I
12	GB30V60DF	STMicroelectronics	IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo
13	STGB30H60DF	STMicroelectronics	30A high speed trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short circuit rated • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1)
14	STGB30H60DLLFBAG	STMicroelectronics	Automotive-grade trench gate field-stop IGBT  AEC-Q101 qualified  Maximum junction temperature: TJ = 175 °C  Logic level gate drive  High speed switching series  Minimized tail current  VCE(sat) = 1.7 V (typ.) @ IC = 30 A  Low VF soft recovery co-packaged diode  Tight parameters distrib
15	STGB30H65DFB2	STMicroelectronics	high-speed HB2 series IGBT • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature c
16	STGB3NC120HD	STMicroelectronics	IGBT ■ High voltage capability ■ High speed ■ Very soft ultrafast recovery anti-parallel diode Applications ■ Home appliance ■ Lighting Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast sw