STGB30V60F |
Part Number | STGB30V60F |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction a... |
Features |
• Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ... |
Document |
STGB30V60F Data Sheet
PDF 1.41MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STGB30V60DF |
STMicroelectronics |
Trench gate field-stop IGBT | |
2 | STGB30H60DF |
STMicroelectronics |
30A high speed trench gate field-stop IGBT | |
3 | STGB30H60DFB |
STMicroelectronics |
IGBT | |
4 | STGB30H60DLLFBAG |
STMicroelectronics |
Automotive-grade trench gate field-stop IGBT | |
5 | STGB30H65DFB2 |
STMicroelectronics |
high-speed HB2 series IGBT | |
6 | STGB30M65DF2 |
STMicroelectronics |
Trench gate field-stop IGBT |