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STGB35N35LZ |
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| Part Number | STGB35N35LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The devic... |
| Features |
• Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Application • Automotive ignition Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. E (3) ... |
| Document |
 STGB35N35LZ Data Sheet
PDF 714.43KB |
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Desde 2024. D4U Semiconductor.
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