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STGB30H65DFB2 |
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| Part Number | STGB30H65DFB2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to ... |
| Features |
• Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • • • • • NG1E3C2T Welding Power factor correction UPS Solar inverters Chargers Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at ... |
| Document |
 STGB30H65DFB2 Data Sheet
PDF 645.04KB |
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