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Stanson Technology |
MOSFET D1 S1 D2 02YW G1 S2 G2 Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STC6602ST6RG TSOP-6 02YW ※ Week Code Code : A ~ Z ; a ~ z ※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Be |
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Stanson Technology |
MOSFET N-Channel z 40V/6.0A, RDS(ON) = 48mΩ (Typ.) @VGS = 10V z 40V/5.0A, RDS(ON) = 63mΩ @VGS = 4.5V PART MARKING P-Channel z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.) @VGS = -10V z -40V/-5.0A, RDS(ON)= 103mΩ @VGS = - 4.5V z Super high density cell design for extr |
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Stanson Technology |
MOSFET D1 S1 D2 02YW G1 S2 G2 Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STC6602ST6RG TSOP-6 02YW ※ Week Code Code : A ~ Z ; a ~ z ※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Be |
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STANSON |
N&P-Channel Enhancement Mode MOSFET N-Channel l 60V/8.0A, RDS(ON) = 37mR @VGS = 10V l 60V/5.0A, RDS(ON) = 28mΩ @VGS = 4.5V P-Channel l -60V/-5.0A, RDS(ON) = 46mΩ @VGS = -10V l -60V/-3.0A, RDS(ON)= 65mΩ @VGS = - 4.5V l Super high density cell design for extremely low RDS(ON) l Exception |
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STANSON |
N&P Pair Enhancement Mode MOSFET N-Channel � 40V/10A, RDS(ON) = 24mΩ (Typ.) @VGS = 10V � 40V/8.0A, RDS(ON) = 30mΩ @VGS = 4.5V � 40V/6.0A, RDS(ON) = 36mΩ @VGS = 2.5V P-Channel � -40V/-10A, RDS(ON) = 38mΩ(Typ.) @VGS = -10V � -40V/-8.0A, RDS(ON)= 46mΩ @VGS = - 4.5V � Super high density |
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Stanson Technology |
MOSFET N-Channel z 30V/6.8A, RDS(ON) = 34mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel z -30V/-6.2A, RDS(ON) = 60mΩ @VGS = -10V z -30V/-4.6A, RDS(ON)= 80mΩ @VGS = - 4.5V z Super high density cell design for extremely low RDS(ON) z Exception |
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Stanson Technology |
MOSFET N-Channel z 30V/6.8A, RDS(ON) = 34mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel z -30V/-6.2A, RDS(ON) = 60mΩ @VGS = -10V z -30V/-4.6A, RDS(ON)= 80mΩ @VGS = - 4.5V z Super high density cell design for extremely low RDS(ON) z Exception |
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Stanson Technology |
MOSFET N-Channel z 30V/6.8A, RDS(ON) = 34mΩ @VGS = 10V z 30V/5.6A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel z -30V/-6.2A, RDS(ON) = 60mΩ @VGS = -10V z -30V/-4.6A, RDS(ON)= 80mΩ @VGS = - 4.5V z Super high density cell design for extremely low RDS(ON) z Exception |
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Stanson Technology |
MOSFET N-Channel z 40V/6.0A, RDS(ON) = 48mΩ (Typ.) @VGS = 10V z 40V/5.0A, RDS(ON) = 63mΩ @VGS = 4.5V PART MARKING P-Channel z -40V/-7.2A, RDS(ON) = 90mΩ(Typ.) @VGS = -10V z -40V/-5.0A, RDS(ON)= 103mΩ @VGS = - 4.5V z Super high density cell design for extr |
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Stanson Technology |
MOSFET N-Channel 60V/7.0A, RDS(ON) = 35mΩ(Typ.) @VGS = 10V 60V/4.0A, RDS(ON) = 40mΩ @VGS = 4.5V PART MARKING P-Channel -60V/-5.0A, RDS(ON) = 60mΩ(Typ.) @VGS = -10V -60V/-3.0A, RDS(ON)= 80mΩ @VGS = -4.5V Super high density cell design for extremely low RDS |
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STANSON |
N&P Pair Enhancement Mode MOSFET N-Channel 30V/6.9A, RDS(ON) = 30mΩ（Typ） @VGS = 10V 30V/6.0A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel -30V/-6.0A, RDS(ON) = 41mΩ（Typ） @VGS = -10V -30V/-5.0A, RDS(ON)= 60mΩ @VGS = - 4.5V Super high density cell design for extremely low RDS(ON) Exceptional |
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STANSON |
N&P-Channel Enhancement Mode MOSFET N-Channel l 40V/12.0A, RDS(ON) = 25mR @VGS = 10V l 40V/10.0A, RDS(ON) = 32mΩ @VGS = 4.5V P-Channel l -40V/-8.0A, RDS(ON) = 40mΩ @VGS = -10V l -40V/-4.0A, RDS(ON)= 65mΩ @VGS = - 4.5V l Super high density cell design for extremely low RDS(ON) l Excepti |
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Stanson |
Complementary Dual Enhancement Mode MOSFET P Channel z -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V z -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel z 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V z 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.5V z Super high density cell design for extremely low RDS( |
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Desde 2024. D4U Semiconductor.
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