Busque con el número de pieza junto con el fabricante o la descripción
STC4614 |
Click to view a larger image
| Part Number | STC4614 |
| Manufacturer | STANSON |
| Description | The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state re... |
| Features |
e, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4614 2009. V1
STC4614
N&P Pair Enhancement Mode MOSFET
10A / -10A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage
Symbol VDSS
Typical NP
40 -40
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
±20
10.0 8.0
25
±20
-10.0 -8.0
-25
2.3 -2.3
2.5 2.8 1.6 1.8
-55/150
Storgae Temperature Ra... |
| Document |
 STC4614 Data Sheet
PDF 489.11KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|