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STC4606 |
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| Part Number | STC4606 |
| Manufacturer | STANSON |
| Description | The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state re... |
| Features |
40 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4606 2008. V1
http://www.Datasheet4U.com
STC4606
N&P Pair Enhancement Mode MOSFET
6.5A / -6.9A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Typical P -30 ±20 -6.9 -5.0 -30 -3.0 2.0 1.44 150 -55/150 62.5 110 62.5 110
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient
T≦10Sec Sready State
Symbol VDSS VGS... |
| Document |
 STC4606 Data Sheet
PDF 725.59KB |
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