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STC6614 |
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| Part Number | STC6614 |
| Manufacturer | Stanson Technology |
| Description | The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state re... |
| Features |
View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STC6614 2010. V1
STC6614
N&P Pair Enhancement Mode MOSFET
7.0A / -5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage
Symbol VDSS
Typical NP
60 -60
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
±20 ±20
7.0 -5.0 5.2 -4.0
40 -30
3 -3
2.3 2.3 1.3 1.3
150
Storgae Temperature Range
Thermal Resistan... |
| Document |
 STC6614 Data Sheet
PDF 1.14MB |
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