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Renesas |
Silicon P Channel MOS FET • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1 2 S 1 2 |
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Renesas |
Silicon P Channel MOS FET Power Switching • Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) • Low drive current • High speed switching • 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “HG”. REJ03G1265-0300 Rev.3 |
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Renesas |
Silicon P-Channel MOS FET • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional Power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "DQ". Absolute M |
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Renesas |
Silicon P-Channel MOS FET • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "EQ". Absolute M |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “NG”. Preliminary Datasheet R07D |
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Renesas |
Silicon P-Channel MOS FET • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "FQ". Absolute M |
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Renesas |
Silicon P-Channel MOS FET • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Notes: Marking is "FQ". Preliminary Datasheet R07D |
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Renesas |
Silicon P Channel MOS FET Power Switching • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “LG”. Preliminary Datasheet R07D |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.5 V, ID = –1.1 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “WG”. Preliminary Datasheet R07 |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “UG”. Preliminary Datasheet R07D |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “XG”. Preliminary Datasheet R07 |
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Renesas |
Silicon P-Channel MOS FET • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Notes: Marking is "EQ". Preliminary Datasheet R07D |
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Renesas |
Silicon P-Channel MOS FET • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Notes: Marking is "DQ". Preliminary Datasheet R07D |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 490 mΩ typ (VGS = –10 V, ID = –0.55 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “EG”. Preliminary Datasheet R07 |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”. REJ03G1266-0300 Rev.3 |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 485 mΩ typ (VGS = –10 V, ID = –0.75 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “EG”. REJ03G1268-0300 Rev. |
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Renesas |
Silicon P-Channel MOS FET • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “LG”. Preliminary Datasheet R07D |
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Desde 2024. D4U Semiconductor.
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