RQJ0204XGDQA |
Part Number | RQJ0204XGDQA |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
• Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “XG”. Preliminary Datasheet R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Ts... |
Document |
RQJ0204XGDQA Data Sheet
PDF 123.47KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RQJ0201UGDQA |
Renesas |
Silicon P-Channel MOS FET | |
2 | RQJ0202VGDQA |
Renesas |
Silicon P Channel MOS FET Power Switching | |
3 | RQJ0203WGDQA |
Renesas |
Silicon P-Channel MOS FET | |
4 | RQJ0301HGDQS |
Renesas |
Silicon P-Channel MOS FET | |
5 | RQJ0302NGDQA |
Renesas |
Silicon P-Channel MOS FET | |
6 | RQJ0303PGDQA |
Renesas |
Silicon P Channel MOS FET |