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RQJ0306FQDQS |
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| Part Number | RQJ0306FQDQS |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | RQJ0306FQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) ... |
| Features |
• Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "FQ". Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When... |
| Document |
 RQJ0306FQDQS Data Sheet
PDF 106.52KB |
Similar Datasheet
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| 5 | RQJ0304DQDQA |
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| 6 | RQJ0304DQDQS |
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Desde 2024. D4U Semiconductor.
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