RQJ0303PGDQA |
Part Number | RQJ0303PGDQA |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
• Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1 2 S 1 2 1. Source 2. Gate 3. Drain Note: Marking is “PG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Tch Tstg Ratings –30 +10... |
Document |
RQJ0303PGDQA Data Sheet
PDF 182.22KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RQJ0301HGDQS |
Renesas |
Silicon P-Channel MOS FET | |
2 | RQJ0302NGDQA |
Renesas |
Silicon P-Channel MOS FET | |
3 | RQJ0304DQDQA |
Renesas |
Silicon P-Channel MOS FET | |
4 | RQJ0304DQDQS |
Renesas |
Silicon P-Channel MOS FET | |
5 | RQJ0305EQDQA |
Renesas |
Silicon P-Channel MOS FET | |
6 | RQJ0305EQDQS |
Renesas |
Silicon P-Channel MOS FET |