PUOLOP SI2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SI2333	PUOLOP	P-ChannelEnhancement Mode Power MOSFET ● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D SOT-23
2	SI2307	PUOLOP	-30V P-Channel Enhancement Mode MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete
3	SI2310	PUOLOP	N-channel MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 GS REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter M
4	SI2304	PUOLOP	30V N-Channel Enhancement Mode MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions - D SOT-23 GS REF. A B C D E F Millimeter Min. Max.