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SI2310 |
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| Part Number | SI2310 |
| Manufacturer | PUOLOP |
| Description | SI2310 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), [email protected], [email protected] < 28mΩ RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ Features Advanced trench process technology High Density Cell Design For Ult... |
| Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98
0° 10°
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
... |
| Document |
 SI2310 Data Sheet
PDF 530.53KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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