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SI2307 |
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| Part Number | SI2307 |
| Manufacturer | PUOLOP |
| Description | SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), [email protected], [email protected] < 87m Ω Features Advanced trench process technology High Density Cell Desi... |
| Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
SOT-23-3L
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. 1.90 1.00 0.10 0.40 0.85
Max. REF.
1.30 0.20
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ± 20
Continuous Drain Current Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC TA = 75oC
ID IDM
PD
-5.3 -20 1... |
| Document |
 SI2307 Data Sheet
PDF 1.30MB |
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