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SI2304 |
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| Part Number | SI2304 |
| Manufacturer | PUOLOP |
| Description | SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For... |
| Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications
Package Dimensions
-
D
SOT-23
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98
0° 10°
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
30 "20
Continuous Drain Current (TJ = 150_C)a, b
Pulsed D... |
| Document |
 SI2304 Data Sheet
PDF 1.36MB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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