| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
16-Bit Bus Switch with 25 Series Resistor in Outputs Preliminary s 25Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. Ordering Code: Order Number FST162244MTD Package Number MTD48 Packa |
|
|
|
|
Fairchild Semiconductor |
Synchronous 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus Switch |
|
|
|
|
Fairchild Semiconductor |
12-Bit to 24-Bit Multiplexer/Demultiplexer Bus Switch s 4Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. s Internal 500Ω pull-down resistor on A2 port. Ordering Code: Order |
|
|
|
|
Fairchild Semiconductor |
16-Bit Bus Switch with 25 Series Resistors in Outputs I 25Ω switch connection between two ports I Minimal propagation delay through the switch I Low lCC I Zero bounce in flow-through mode I Control inputs compatible with TTL level Ordering Code: Order Number FST162245MTD Package Number MTD48 Package De |
|
|
|
|
Fairchild Semiconductor |
16-Bit Bus Switch (Preliminary) s 4Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. Ordering Code: Order Number FST16244MTD Package Number MTD48 Package |
|
|
|
|
Fairchild Semiconductor |
16-Bit Bus Switch s 4: switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. Ordering Code: Order Number FST16245MTD Package Number MTD48 Package |
|
|
|
|
Fairchild Semiconductor |
20-Bit Bus Switch with 25W Series Resistors in Outputs s 25: switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. Ordering Code: Order Number FST162861MTD (Note 1) FST162861MTDX_NL |
|
|
|
|
Fairchild Semiconductor |
20-Bit Bus Switch s 4Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. Ordering Code: Order Number FST16861MTD Package Number MTD48 Package |
|
|
|
|
Fairchild Semiconductor |
20-Bit Bus Switch I 4Ω switch connection between two ports. I Minimal propagation delay through the switch. I Low lCC. I Zero bounce in flow-through mode. I Control inputs compatible with TTL level. Ordering Code: Order Number FST16862QSP FST16862MTD Package Number P |
|
|
|
|
Fairchild Semiconductor |
17-Bit to 34-Bit Multiplexer/Demultiplexer Bus Switch s Slower Output Enable times prevent signal disruption s 4Ω switch connection between two ports. s Minimal propagation delay through the switch. s Low lCC. s Zero bounce in flow-through mode. s Control inputs compatible with TTL level. s See Applicat |
|
|
|
|
ON Semiconductor |
Power Field Effect Transistor DPAK VDSS 100 V http://onsemi.com RDS(ON) TYP 0.22 W ID MAX 10 A N−Channel D • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS a |
|
|
|
|
ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Typical applications are dc−dc converters, and |
|
|
|
|
ON Semiconductor |
Power MOSFET • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1. |
|
|
|
|
ON Semiconductor |
Power MOSFET d Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance – Junction to Case – Junction to Ambient – Junction to Ambient, when m |
|
|
|
|
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor -12 A, -60 V. RDS(ON) = 0.23 Ω @ VGS = -10 V Low gate charge. Fast switching speed. High performance technology for low RDS(ON). 6 * 6 72 ' * ' R $EVROXWH 0D[LPXP 5DWLQJV 6\PERO W '66 W *66 D' 9 hvT prÃWyhtr B hrT prÃWy |
|
|
|
|
National Semiconductor |
48 Lead Molded Thin Shrink Small Outline Package or to affect its safety or effectiveness http www national com National Semiconductor Europe Fax a49 (0) 180-530 85 86 Email europe support nsc com Deutsch Tel a49 (0) 180-530 85 85 English Tel a49 (0) 180-532 78 32 Fran ais Tel a49 (0) 180-532 93 |
|
|
|
|
ON Semiconductor |
Power MOSFET • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1. |
|
|
|
|
ON Semiconductor |
Power Field Effect Transistor VGS VGSM ID IDM PD PD PD TJ, Tstg Value 150 150 ± 20 ± 40 6.0 20 20 0.16 1.25 0.01 1.75 0.014 −65 to +150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C Watts W/°C Watts W/°C °C 1 Gate 6N15 Y WW CASE 369C DPAK (Surface Mount) STYLE 2 1 2 3 1 3 CASE 369D DPAK ( |
|
|
|
|
ON Semiconductor |
Power MOSFET http://onsemi.com 6 AMPERES, 200 VOLTS RDS(on) = 460 mW N−Channel D • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a • • • Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS |
|
|
|
|
ON Semiconductor |
Power MOSFET ature Range VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg 60 Vdc 60 Vdc ± 20 ± 25 15 8.7 45 55 0.36 2.1 −55 to 175 Vdc Vpk Adc Apk Watts W/°C Watts °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL |
|
Desde 2024. D4U Semiconductor.
|