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MTD10N10EL |
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| Part Number | MTD10N10EL |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTD10N10EL TMOS E−FET™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and c... |
| Features |
VDSS 100 V
http://onsemi.com
RDS(ON) TYP 0.22 W
ID MAX 10 A
N−Channel D
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) www.DataSheet4U.com Parameter Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous − Continuous @ 100°C − Single Pulse (... |
| Document |
 MTD10N10EL Data Sheet
PDF 104.99KB |
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Desde 2024. D4U Semiconductor.
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