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MTD6N20E |
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| Part Number | MTD6N20E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | www.DataSheet4U.com MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Th... |
| Features |
http://onsemi.com
6 AMPERES, 200 VOLTS RDS(on) = 460 mW
N−Channel D
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a • • • Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available* Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA ... |
| Document |
 MTD6N20E Data Sheet
PDF 114.11KB |
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