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MTD5P06V |
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| Part Number | MTD5P06V |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTD5P06V Preferred Device Power MOSFET 5 A, 60 V, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed sw... |
| Features |
• Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current − Continuous @ 25°C − Continuous @ 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg 60 60 ± 15 ± 25 5 ... |
| Document |
 MTD5P06V Data Sheet
PDF 172.31KB |
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