| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (Typ.) @ IC = 40 A • 100% of the Part are Dynamically Tested (Note 1) • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant Typical Applicat |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A • 100% of the Parts are Tested for |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts are Tested for ILM (Note 2) • Fast |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Tight Parameter Distribution • High Input Impedance |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 100 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Tight Parameter Distribution • High Input Impedance |
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Toshiba Semiconductor |
3D comb & Video Decoder • Multi color system • Input I/F •F CVBS / S / YCbCr • 3DYCS •F NTSC system • 3lineYCS+3D YNR/CNR : Multi color system •i SECAM •F BPF YCS •j • Output I/F •F 656 / 601 • Picture improvement Y •F Vertical enhance / LTI / Contrast / Set up adjust C •F TO |
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Toshiba Semiconductor |
COLUMN DRIVER LSI Dot matrix graphic LCD column driver with display RAM Display RAM capacity : 64 lines × 10 pages × 8 bits = 5120 bits (display area) 1 line × 10 pages × 8 bits = 80 bits (flag area) Total = 5200 bits : 80 : 80-family MPU (8-bit) LCD drive outputs In |
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Toshiba Semiconductor |
8-Bit Microcontroller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 Block |
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Toshiba Semiconductor |
8ch Darlington Sink Driver Output current (single output) 500 mA (max) (TD62081APG/AFG series) High sustaining voltage output 50 V (min) (TD62081APG/AFG series) Output clamp diodes Inputs compatible with various types of logic. Package type-APG: DIP-18 pin Package type-AFG: SO |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts are Tested for |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Low VF Soft Recovery Co−packaged Diode • AEC−Q101 Qualified • 100% of the Parts are Dynamically Tested (Note 1) Typical Applications • Au |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts are Tested for |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A • 100% Of The Part Are Dynamically Tested (Note 1) • Short Circuit Ruggedness > 5 mS @ 25°C • Maximum Junction Temperature: TJ = 175°C • Fast Switching • Tight Parame |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 2) • High Inpu |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM (Note 2) • High Inpu |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance |
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ON Semiconductor |
Hybrid IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A • 100% of the Parts are Tested for ILM (Note 2) • Fast |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 2) • High Inpu |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−Efficient • Tight Parameter Distribution • High Input Impedance • 100% of t |
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Desde 2024. D4U Semiconductor.
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