AFGB40T65RQDN |
Part Number | AFGB40T65RQDN |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | IGBT for Automotive Applications 650 V, 40 A AFGB40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This tech... |
Features |
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant Typical Applications • E−compressor for HEV/EV • PTC Heater for HEV/EV DATA SHEET www.onsemi.com BVCES 650 V VCE(sat) TYP 1.55 V C IC 40 A G E C G E D2PAK 3 LEAD CASE 418AJ MARKING DIAGRAM &Y&Z&3&K AFGB40 T65RQDN &Y = Logo &Z = Assem... |
Document |
AFGB40T65RQDN Data Sheet
PDF 241.35KB |
Similar Datasheet
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