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AFGB30T65SQDN |
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| Part Number | AFGB30T65SQDN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Low VF Sof... |
| Features |
• Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Low VF Soft Recovery Co−packaged Diode • AEC−Q101 Qualified • 100% of the Parts are Dynamically Tested (Note 1) Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage Collector Current (TC = 25°C) Collector Current (TC = 100°C) Pulsed Collector Current (Note 2) Diode Forward Current... |
| Document |
 AFGB30T65SQDN Data Sheet
PDF 225.55KB |
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Desde 2024. D4U Semiconductor.
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