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AFGB40T65SQDN |
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| Part Number | AFGB40T65SQDN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | AFGB40T65SQDN IGBT for Automotive Applications, 650 V, 40 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (Typ.) @ IC = 40 A • 100% of th... |
| Features |
• Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (Typ.) @ IC = 40 A • 100% of the Part are Dynamically Tested (Note 1) • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector to Emitter Voltage VCES 650 V Gate-to-Emitter Voltage VGES ±20 V Transient Gate-to-Emitter Voltage VGES ±30 V Collector Current − TC = 25°C IC 80 A Collector... |
| Document |
 AFGB40T65SQDN Data Sheet
PDF 267.23KB |
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Desde 2024. D4U Semiconductor.
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