| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
NXP |
PowerMOS transistor Isolated version of PHP4N50E ce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 |
|
|
|
|
NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 13 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope |
|
|
|
|
NXP |
PowerMOS transistor Isolated version of PHP4N40E ce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 |
|
|
|
|
NXP |
PowerMOS transistor Isolated version of PHP2N40E rce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 10 |
|
|
|
|
NXP |
N-Channel MOSFET s Low on-state resistance s Isolated package. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 41.6 W s ID ≤ 16 A s RDSon ≤ 70 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb P |
|
|
|
|
NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX10N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 5.3 A RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTION N-cha |
|
|
|
|
NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelo |
|
|
|
|
NXP |
PowerMOS transistor Isolated version of PHP20N06E ssipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 60 60 30 13 8.2 52 25 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Th |
|
|
|
|
NXP |
N-channel enhancement mode field-effect transistor s s s s s TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. 3. Applications c c s s s s Off-line switched mode power supplies Television and computer monitor power supplies DC to DC converters Motor |
|
|
|
|
NXP |
PowerMOS transistor Isolated version of PHP1N60E voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚ |
|
|
|
|
NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX2N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 1.3 A RDS(ON) ≤ 6 Ω s GENERAL DESCRIPTION N-channel |
|
|
|
|
NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching • Isolated mounting tab SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 9 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power trans |
|
|
|
|
NXP |
PowerMOS transistor Isolated version of PHP8N50E voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚ |
|
|
|
|
NXP |
PowerMOS transistors Low capacitance Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Low feedback capacitance • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHX6NA60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 3.9 A RDS(ON) ≤ 1. |
|
|
|
|
NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX7N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 3.8 A RDS(ON) ≤ 1 Ω s GENERAL DESCRIPTION N-channel |
|
|
|
|
NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX7N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 3.6 A RDS(ON) ≤ 1.2 Ω s GENERAL DESCRIPTION N-chann |
|
|
|
|
NXP |
PowerMOS transistors FREDFET/ Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package • Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 4.2 A g RDS(ON) ≤ 0.85 |
|
|
|
|
NXP |
N-channel standard level FET |
|
|
|
|
NXP Semiconductors |
PHX18NQ11T s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ |
|
|
|
|
NXP Semiconductors |
N-channel TrenchMOS standard level FET s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ |
|
Desde 2024. D4U Semiconductor.
|