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PHX1N40E |
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| Part Number | PHX1N40E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling p... |
| Features |
rce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. -55 MAX. 400 400 30 1.75 1.1 7.0 1.75 7.0 25 150 150 UNIT V V V A A A A A W ˚C ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 2.5 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to sur... |
| Document |
 PHX1N40E Data Sheet
PDF 24.93KB |
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