Busque con el número de pieza junto con el fabricante o la descripción
PHX14NQ20T |
Click to view a larger image
| Part Number | PHX14NQ20T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc conv... |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package. PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION SOT186A (FPAK) case SOT186 (FPAK) case 1 ... |
| Document |
 PHX14NQ20T Data Sheet
PDF 68.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHX10N40E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 2 | PHX15N06E |
NXP |
PowerMOS transistor Isolated version of PHP20N06E |
|
| 3 | PHX18NQ11T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 4 | PHX18NQ20T |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 5 | PHX1N40 |
NXP |
PowerMOS transistor |
|
| 6 | PHX1N40E |
NXP |
PowerMOS transistor Isolated version of PHP2N40E |
|
Desde 2024. D4U Semiconductor.
|