Busque con el número de pieza junto con el fabricante o la descripción
PHX1N60E |
Click to view a larger image
| Part Number | PHX1N60E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling p... |
| Features |
voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. -55 MAX. 600 600 30 1.3 0.83 5.2 1.3 5.2 25 150 150 UNIT V V V A A A A A W ˚C ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 1.9 A; VDD ≤ 50 V; VGS = 10 V; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge Tj =... |
| Document |
 PHX1N60E Data Sheet
PDF 24.99KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHX1N40 |
NXP |
PowerMOS transistor |
|
| 2 | PHX1N40E |
NXP |
PowerMOS transistor Isolated version of PHP2N40E |
|
| 3 | PHX1N50E |
NXP |
PowerMOS transistor Isolated version fo PHP1N50E |
|
| 4 | PHX10N40E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 5 | PHX14NQ20T |
NXP |
N-channel TrenchMOS transistor |
|
| 6 | PHX15N06E |
NXP |
PowerMOS transistor Isolated version of PHP20N06E |
|
Desde 2024. D4U Semiconductor.
|