| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
NPN power transistor and benefits Fast switching High typical DC current gain High voltage capability Integrated anti-parallel E-C diode 1.3 Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating pow |
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NXP |
Transistor • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHD24N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g RDS(ON) ≤ 56 mΩ |
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NXP |
N-Channel MOSFET and benefits Low conduction losses due to low on-state resistance Simple gate drive required due to low gate charge Suitable for logic level gate drive sources 1.3 Applications DC-to-DC converters 1.4 Quick reference data Table 1. Symbol |
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NXP |
N-Channel MOSFET • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA d SYMBOL VDSS = 55 V ID = 19 A RDS(ON) ≤ 75 mΩ (VGS = 5 V) RDS(ON) ≤ 70 mΩ (VGS = 10 V) s GENERAL |
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NXP |
N-channel TrenchMOS logic level FET s Logic level threshold s Low on-state resistance. 1.3 Applications s DC-to-DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 25 V s RDSon ≤ 10.5 mΩ s ID ≤ 66 A s Qgd = 3.6 nC (typ). 2. Pinning information Table 1: Di |
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NXP |
N-channel enhancement mode field-effect transistor s Low on-state resistance s Fast switching 1.3 Applications s Computer motherboards s DC to DC converters 1.4 Quick reference data s VDS = 25 V s Ptot = 93 W (Tmb = 25 °C) s ID = 75 A (Tmb = 25 °C) s RDSon = 9 mΩ (Tj = 25 °C) 2. Pinning informatio |
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NXP |
N-channel enhancement mode field-effect transistor s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol c Description gate (g) Simplified |
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NXP |
N-channel TrenchMOS logic level FET and benefits Fast switching Lead-free packing Logic level threshold Low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications Computer motherboard high frequency DC-to-DC conv |
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NXP |
N-Channel MOSFET and benefits Low conduction losses due to low on-state resistance Simple gate drive required due to low gate charge Suitable for logic level gate drive sources 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick |
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NXP |
N-Channel MOSFET • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPT |
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NXP |
Transistor dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 14 10 56 75 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETE |
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NXP |
Transistor • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHD24N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g RDS(ON) ≤ 56 mΩ |
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NXP |
PowerMOS transistor Logic level FET current Total dissipation Linear derating factor Gate-source voltage Non-repetitive gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 10 |
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NXP |
TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = |
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NXP |
TrenchMOS logic level FET s Logic level compatible s Low gate charge 1.3 Applications s DC to DC converters s Switched mode power supplies 1.4 Quick reference data s VDS = 30 V s Ptot = 136 W s ID = 75 A s RDSon ≤ 8 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT |
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NXP |
N-channel enhancement mode field-effect transistor s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol c Description gate (g) Simplified |
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NXP |
N-channel TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP87N03LT, PHB87N03LT PHD87N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 75 A RDS(ON) ≤ 9.5 mΩ (VGS = 10 V) RDS(ON) ≤ 1 |
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NXP |
N-channel enhancement mode field-effect transistor s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Descripti |
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NXP |
N-channel TrenchMOS transistor and benefits Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications DC-to-DC converters Gen |
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NXP |
N-channel TrenchMOS FET I Fast switching I Low thermal resistance 1.3 Applications I DC-to-DC converters I Computer motherboard 1.4 Quick reference data I VDS ≤ 25 V I RDSon ≤ 9.5 mΩ I ID ≤ 75 A I QGD = 3.2 nC (typ) 2. Pinning information Table 1. Pinning Pin Descrip |
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Desde 2024. D4U Semiconductor.
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