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PHD12N10E |
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| Part Number | PHD12N10E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weld... |
| Features |
dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 14 10 56 75 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimum footprint 50 MAX. 2 UNIT K/W K/W
September 1997
1
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD12N10E
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO)... |
| Document |
 PHD12N10E Data Sheet
PDF 79.17KB |
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Desde 2024. D4U Semiconductor.
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