Busque con el número de pieza junto con el fabricante o la descripción
PHD101NQ03LT |
Click to view a larger image
| Part Number | PHD101NQ03LT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consu... |
| Features |
Low conduction losses due to low on-state resistance Simple gate drive required due to low gate charge Suitable for logic level gate drive sources 1.3 Applications DC-to-DC converters 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C... |
| Document |
 PHD101NQ03LT Data Sheet
PDF 167.79KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHD108NQ03LT |
NXP |
N-Channel MOSFET |
|
| 2 | PHD10N10E |
NXP |
Transistor |
|
| 3 | PHD110NQ03LT |
NXP |
N-channel FET |
|
| 4 | PHD11N03LT |
NXP |
N-Channel MOSFET |
|
| 5 | PHD11N06LT |
NXP |
Transistor |
|
| 6 | PHD12N10E |
NXP |
Transistor |
|
Desde 2024. D4U Semiconductor.
|