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PHD108NQ03LT |
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| Part Number | PHD108NQ03LT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consu... |
| Features |
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Avalance ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy
Dynamic characteristics
VGS = 10 V; Tj... |
| Document |
 PHD108NQ03LT Data Sheet
PDF 189.58KB |
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