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NXP Semiconductors |
N-channel FET s Logic level threshold s SO8 equivalent area footprint s Low thermal resistance s Low gate charge. 1.3 Applications s DC-to-DC converters s Portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 16.9 mΩ s ID ≤ 38 A s Qgd = 2.9 nC (ty |
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NXP Semiconductors |
N-channel TrenchMOS Iogic levelFET s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package 1.3 Applications s DC-to-DC converters s Motors, lamps and solenoids s General purpose power switching s 12 V and 24 V loads 1.4 Quick reference data s VDS ≤ |
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NXP |
N-channel MOSFET and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power convertors Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Appli |
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NXP |
Secure contactless smart-card-IC and benefits Entry level version of the proven 1 kB EEPROM MIFARE Plus product family Simple fixed memory structure Fully supports MIFARE Classic value compatible with MIFARE Classic block operations AES-128 for authenticity and int |
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NXP |
N-channel TrenchMOS logic level FET s Logic level threshold s Low thermal resistance s Very low on-state resistance s Surface-mounted package 1.3 Applications s DC motor control s DC-to-DC converters s General purpose power switching 1.4 Quick reference data s VDS ≤ 75 V s RDSon ≤ 16 |
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NXP Semiconductors |
N-channel TrenchMOS logic level FET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Consumer applications Desktop Voltage Regulator Module (VRM) Notebook Voltage Regulator Module (VRM) 1. |
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NXP |
N-channel TrenchMOS logic level FET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Consumer applications Desktop Voltage Regulator Module (VRM) Notebook Voltage Regulator Module (VRM) 1. |
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NXP |
N-channel MOSFET and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Appli |
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NXP |
Secure contactless smart-card-IC and benefits Entry level version of the proven 1 kB EEPROM MIFARE Plus product family Simple fixed memory structure Fully supports MIFARE Classic value compatible with MIFARE Classic block operations AES-128 for authenticity and int |
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Desde 2024. D4U Semiconductor.
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