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PH1225AL |
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| Part Number | PH1225AL |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High ... |
| Features |
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
For computing use only
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature Avalanche ruggedness
EDS(AL)S non-repetitive drain-source ... |
| Document |
 PH1225AL Data Sheet
PDF 190.90KB |
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