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PH1930AL |
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| Part Number | PH1930AL |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applicati... |
| Features |
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1.3 Applications
Consumer applications Desktop Voltage Regulator Module
(VRM)
Notebook Voltage Regulator Module (VRM)
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V;
[1] -
-
100 A
see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
- - 97 W
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.... |
| Document |
 PH1930AL Data Sheet
PDF 194.43KB |
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