PH1955L |
Part Number | PH1955L |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold s 175 °C rated s Low on-state resistance s S... |
Features |
s Logic level threshold s 175 °C rated s Low on-state resistance s Surface-mounted package
1.3 Applications
s DC-to-DC converters s Motors, lamps and solenoids s General purpose power switching s 12 V and 24 V loads
1.4 Quick reference data
s VDS ≤ 55 V s RDSon ≤ 17.3 mΩ s ID ≤ 40 A s QGD = 8 nC (typ)
2. Pinning information
Table 1: Pin 1, 2, 3 4 mb Pinning Description source (S) gate (G) mounting base; connected to drain (D)
1 2 3 4 mb
D
Simplified outline
Symbol
G
mbb076
S
SOT669 (LFPAK)
Philips Semiconductors
www.DataSheet4U.com
PH1955L
N-channel TrenchMOS logic level FET
3. Ord... |
Document |
PH1955L Data Sheet
PDF 148.26KB |
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